Recently, the upcoming Samsung Galaxy Tab Active3 tablet has been spotted on Geekbench. The Geekbench revealed the chipset and RAM capacity of the device.
In the Geekbench, the Galaxy Tab Active3 is powered by a Samsung Exynos 9810 chipset. The chipset is based on a 10nm FinFET manufacturing process. It consists of eight cores, of which there are four performance custom cores clocked at 2.9GHz and four energy-efficient Cortex-A55 cores clocked at 1.9GHz.
The SM-T570 is the Wi-Fi variant of Galaxy Tab Active3, as we previously reported. With Exynos 9810, the tablet scored 306 points on single-core, while on multi-core, it scored 1324 points. The performance score is not as good as it should be.
The RAM storage variant that was spotted on Geekbench is a 4GB RAM variant.
Previously, it was reported that the upcoming Galaxy Tab Active3 would feature an ordinary display with large bezels and a home button (like the previous model). Moreover, some other certifications also revealed that a 4900mAh Battery would power it with 18W fast charging.
As we reported, the phone will be available in both Wi-Fi and 4G variants. Moreover, the SIM variant will also be available in the Dual-SIM version.
Samsung Galaxy Tab Active series is popular for its rugged design, especially in industrial or tough environments. Moreover, the Galaxy Tab Active series is also IP68-certified and MIL-STD-810G compliant.
Currently, there is no official announcement regarding the launch of the phone. But it is expected that it may launch soon.